The maximum f T estimated from the static measurement is 1.4 THz from a graphene FET with L gate = 45 nm fabricated by a self-aligned approach 9. The measured maximum f T is 300 GHz for a graphene FET with L gate = 144 nm based on exfoliated graphene 10. All these experimental investigations reveal that f T of graphene transistors generally increases with the decreasing L gate. The intrinsic cut-off frequency ( f T) represents how fast the channel current is modulated by the gate and is one of the most important figure-of-merit for evaluating the performance of r. Extensive gate length ( L gate) scaling work of graphene FETs has been experimentally pursued 9, 10, 11, 12, 13, 14, with the gate length scaling down to 40 nm 14. applications, FETs should respond quickly to the gate voltage ( V g), which requires short gates 6.
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In order to facilitate high-performance r. graphene transistors is attracting enormous recent attention 7, 8, 9, 10, 11, 12, 13, 14, 15, 16. f.) electronic applications 6, which are the core elements in wireless communication devices. However, a large on/off ratio is not necessary for radio frequency (r. There is still a lack of reliable techniques to open a sizable gap without degrading the electronic properties of graphene.
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Because of its zero band gap, graphene field effect transistors (FETs) have a low on/off current ratio, which limits its application in logic devices. Graphene is of particular interest for ultrahigh speed electronics due to its high carrier mobility and saturation velocity 1, 2, 3, 4, 5, 6.